power transistors 1 publication date: april 2003 sjd00016bed 2SB0934 (2sb934) silicon pnp epitaxial planar type for power switching complementary to 2sd1257 features ? low collector-emitter saturation voltage v ce(sat) ? satisfactory linearity of forward current transfer ratio h fe ? large collector current i c ? n type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. absolute maximum ratings t c = 25 c parameter symbol rating unit collector-base voltage (emitter open) v cbo ? 130 v collector-emitter voltage (base open) v ceo ? 80 v emitter-base voltage (collector open) v ebo ? 7v collector current i c ? 7a peak collector current i cp ? 15 a collector power dissipation p c 40 w t a = 25 c 1.3 junction temperature t j 150 c storage temperature t stg ? 55 to + 150 c parameter symbol conditions min typ max unit collector-emitter voltage (base open) v ceo i c = ? 10 ma, i b = 0 ? 80 v collector-base cutoff current (emitter open) i cbo v cb = ? 100 v, i e = 0 ? 10 a emitter-base cutoff current (collector open) i ebo v eb = ? 5 v, i c = 0 ? 50 a forward current transfer ratio h fe1 v ce = ? 2 v, i c = ? 0.1 a 45 ? h fe2 * v ce = ? 2 v, i c = ? 3 a 90 260 base-emitter voltage v be(sat) i c = ? 5 a, i b = ? 0.25 a ? 1.5 v collector-emitter saturation voltage v ce(sat) i c = ? 5 a, i b = ? 0.25 a ? 0.5 v transition frequency f t v ce = ? 10 v, i c = ? 0.5 a, f = 10 mhz 30 mhz turn-on time t on i c = ? 3 a, 0.5 s storage time t stg i b1 = ? 0.3 a, i b2 = 0.3 a 1.5 s fall time t f v cc = ? 50 v 0.1 s electrical characteristics t c = 25 c 3 c unit: mm rank q p h fe2 90 to 180 130 to 260 note) the part number in the parenthesis shows conventional part number. 8.5 0.2 3.4 0.3 1.0 0.1 0 to 0.4 6.0 0.2 0.8 0.1 r = 0.5 r = 0.5 1.0 0.1 0.4 0.1 (8.5) (6.5) (6.0) 1.3 (1.5) (7.6) 2.54 0.3 1.4 0.1 5.08 0.5 123 1.5 0.1 2.0 0.5 10.0 0.3 1.5 +0 ?0.4 3.0 +0.4 ?0.2 4.4 0.5 4.4 0.5 14.4 0.5 note) self-supported type package is also prepared. note) 1. measuring methods are based on japanese industrial standard jis c 7030 measuring methods for transistors. 2. * : rank classification 1: base 2: collector 3: emitter n-g1 package
2SB0934 2 sjd00016bed v be(sat) ? i c h fe ? i c f t ? i c p c ? t a i c ? v ce v ce(sat) ? i c 0 160 40 120 80 0 10 20 30 40 50 (1)t c =ta (2)with a 50 50 2mm al heat sink (3)without heat sink (p c =1.3w) (1) (3) (2) collector power dissipation p c (w) ambient temperature t a ( c) 0 ? 0.4 ? 0.8 ? 1.2 ? 2.0 ? 1.6 0 ? 10 ? 2 ? 4 ? 8 ? 6 t c =25?c i b =?20ma ?10ma ?00ma ?0ma ?0ma ?0ma ?0ma ?0ma ?0ma ?0ma ?0ma collector current i c (a) collector-emitter voltage v ce (v) ? 0.01 ? 0.1 ? 0.1 ? 1 ? 10 ? 100 ? 1 ? 10 ? 100 collector-emitter saturation voltage v ce(sat) (v) collector current i c (a) i c /i b =20 25?c t c =100?c ?5?c ? 0.01 ? 0.01 ? 0.1 ? 1 ? 10 ? 100 ? 0.1 ? 1 ? 10 i c /i b =20 t c =?5?c 25?c 100?c base-emitter saturation voltage v be(sat) (v) collector current i c (a) ? 0.1 ? 1 ? 10 ? 100 1 10 10 2 10 4 10 3 v ce =?2v t c =100?c 25?c ?25?c forward current transfer ratio h fe collector current i c (a) ? 0.01 ? 0.1 ? 1 ? 10 transition frequency f t (mhz) collector current i c (a) 1 10 10 2 10 4 10 3 v ce =?10v f=10mhz t c =25?c ? 0.1 ? 1 ? 10 ? 100 1 10 10 2 10 3 10 4 collector output capacitance (common base, input open circuited) c ob (pf) collector-base voltage v cb (v) i e =0 f=1mhz t c =25?c c ob ? v cb t on , t stg , t f ? i c safe operation area 0 0.01 0.1 1 10 100 ? 8 ? 2 ? 6 ? 4 t stg t on t f pulsed t w =1ms duty cycle=1% i c /i b =10 (?i b1 =i b2 ) v cc =?50v t c =25?c turn-on time t on , storage time t stg , fall time t f ( s ) collector current i c (a) collector current i c (a) collector-emitter voltage v ce (v) ? 0.01 ? 1 ? 0.1 ? 1 ? 10 ? 100 ? 10 ? 100 ? 1 000 non repetitive pulse t c =25?c t=10ms t=0.5ms t=1ms i cp i c t=300ms
2SB0934 3 sjd00016bed r th - t 1 10 10 ? 4 10 1 10 ? 2 10 ? 1 10 3 10 2 10 4 10 3 10 2 10 ? 1 10 ? 2 10 ? 3 time t (s) thermal resistance r th ( c/w) (1) (2) (1)without heat sink (2)with a 50 50 2mm al heat sink
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